TiO2-CU Thin Film Material for Optical Hydrogen Gas Sensor Applications
DOI:
https://doi.org/10.47941/nsj.1011Abstract
Purpose: Several scientific researches are underway to investigate the possibility of using various green energies. Hydrogen gas is a candidate of such research, since its use as a fuel in automobiles releases pure water, a recyclable biproduct. But, the leakages of the gas are detrimental to its application due to its low auto ignition energy of 20 μj, wider air flame limit of 4-75 % and high flame velocity of 3.46 ms-1. This study involved fabrication of an optical gas sensor for sensing the leakage levels of hydrogen gas to a surrounding.
Methodology: Titanium dioxide thin films of thicknesses 47.7, 56.2, 82.3, 100.4 and 120.5 nm were deposited on both microscope and FTO glass slides using DC magnetron sputtering technique and characterized as primate and annealed at 400 and 500oC. Copper (Cu) catalytic layers of 5.6, 10.2, 17.3 and 21.0 nm were deposited using EDWARDS AUTO 306 Magnetron sputtering system on an optimized 100.4 nm TiO2 sample, annealed at 400oC. Optical properties were deduced from transmittance and absorbance spectra measured using 1800 Shimadzu spectrophotometer in the optimum range of 280-800 nm through simulation. The optical behavior of the films was generated using SCOUT software and analyzed using ORIGIN 9.1 64-bit software.
Results: The energy band gap decreased with material thickness from 4.2±0.05 eV for 47.7 nm film to 3.9±0.05 eV for 100.4 nm films. 120.5 nm films showed higher energy gap of 4.0±0.05 eV. Transmittance decreased with increase in thickness probably due to agglomeration of film particles. The energy gap of the 100.4 nm, TiO2 thin films annealed at 400oC was 3.9±0.05 eV. This is a material quality of the anatase phase. The copper surface layer increased absorption in the higher wavelength region. The energy band gaps were reduced from 3.9 to 3.8±0.05 eV with increased coverage. Self-limiting at 17.3 nm copper overlayer realized increased energy gap to 4.1±0.05 eV. A lower energy band gap range of 3.9-3.8±0.05 eV was realized when FTO substrates were used. The transmittance decreased with increased H2 gas concentration. The optical energy gap reduced from 4.1±0.05 eV in 0 ccm to 3.9±0.05 eV in 50 ccm of hydrogen gas concentration. The sensitivity increased from 0.3 % in 0ccm to 3.9 % in 50 ccm hydrogen gas concentration. An average sensitivity of 2.0 % was realized for films fabricated on FTO substrate. This is higher than 1.7 % reported earlier. The material gas sensing potential was done at room temperature. The fabricated sensor material showed higher sensitivity and lower temperature operation and is furthermore, expected to be cheaper and safer
Unique Contribution to Theory, Policy and Practices: Though, in order to realize a more portable stand-alone gas sensor, an investigation on an ideal photon type source that incorporates the material is recommended. Further, extension of this study on structure and morphology of the film is essential to understand its sensing behavior.
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